Journal of the Ceramic Association, Japan
Online ISSN : 1884-2127
Print ISSN : 0009-0255
ISSN-L : 0009-0255
Inversion Temperature of Leucite Formed in SiO2-Al2O3-K2O Noncrystalline Materials
Takeshi HOSHIKAWA
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1976 Volume 84 Issue 971 Pages 313-320

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Abstract

The noncrystalline materials of the system SiO2-Al2O3-K2O were heat-treated at 1200°C-1600°C, and the inversion temperature of tetragonal→←cubic phases, the lattice constants and the amount of leucite crystals precipitated in the noncrystalline materials were measured by using DTA apparatus and X-ray diffractometer.
It was found that the inversion temperature varied in the wide rage of 404°C to 628°C with the atomic ratio δ=Si/Si+Al+K of the noncrystalline material and the crystallization temperature. Each leucite precipitated in the noncrystalline materials with δ<0.5 showed a constant inversion temperature 621±7°C corresponding to that of the leucite with stoichiometric composition. Inversion temperature of leucite precipitated in the noncrystalline materials with δ>0.5 lowered with the increase of δ and with the decrease of crystallization temperature and the lattice parameter c/a tend to decrease with inversion temperature.
It was concluded that in the case of δ>0.5, the leucite crystals having the composition of (KAl)1-xSi2+xO6 (x>0) had a higher symmetrical lattice than the stoichiometric one and the lattice defects which might be caused by the defficiencies of potassium ions increasing with δ.
The shift of AlKα peak of the leucite crystals prepared was also measured by the X-ray fluorecence spectrometer. The results indicated that the aluminum ions in the leucite crystals were in fourfold coordination.

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