Journal of the Ceramic Association, Japan
Online ISSN : 1884-2127
Print ISSN : 0009-0255
ISSN-L : 0009-0255
Preparation of MnFe2O4 Films by OMCVD
Hideaki ITOHHirofumi YAMAGUCHIShigeharu NAKA
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1987 Volume 95 Issue 1097 Pages 60-64

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Abstract
Polycrystalline and epitaxial films of MnFe2O4 were prepared by organometallic chemical vapor deposition using metal acetylacetonates as starting materials. Mn(acac)2 and Fe(acac)3 were evaporated at 165°-175° and 140°-143°C, respectively under a reduced pressure (5-10 Torr) and were transported to the deposition zone with N2, gas, where MnFe2O4 deposited by thermal decomposition of acetylacetonates in the vapor phase including O2 reaction gas. Polycrystalline MnFe2O4 films were grown on a silica glass substrate under the following deposition conditions; pressure: 5-10 Torr, deposition temperature: 600°-700°C, N2 flow rate: 100ml/min, O2 flow rate: 5ml/min. The growth rate of the film at 600°C was 130Å/min. The saturation magnetization and coercive force were 62-80emu/g and about 80 Oe, respectively. Epitaxial MnFe2O4 films were grown on {100} MgO single crystal at 10 Torr and 650°-700°C using lower concentrations of metal acetylacetonates. The saturation magnetization of the epitaxial film increased with increasing film thickness, though lower than that of the polycrystalline film.
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