Electrical Property and Microstructure of Semiconducting Glaze

Abstract

The relationship between a content of semiconducting powder and an electrical property of the glaze was analyzed considering of microstructural differences in electrical conducting channels. Those channels are formed by three dimensional connections of a high conductive layer surrounding a semiconducting particle. Fair coincidence between measured conductivity and calculated one was found in the range of V_e≤V_t by Hanai model and in the range of V_e>V_t by Keller's cylindrical model for this glaze system.