Preparation of SiO₂-M_xO_y Thin Films and Gels by Sol-Gel Method Using Silicic Acid and Metal Halides

Abstract

A method for preparing SiO₂ M_xO_y (M=Ti, Sb, V, Zr, Sn) thin films and monolithic gels was investigated. The reaction of silicic acid (SA) with metal chlorides or oxychlorides in organic solvents gave homogeneous solutions. Transparent gel films and gels were obtained by dip-coating of a glass substrate and aging of the solutions in a polyethylene beaker, respectively. Heat treatment of the gel films yielded oxide thin films with thickness from 0.1 to 0.4μm with a transmittance of above 90%.