The Crystal Structure and Gas Sensing Property of Tin Oxide Films Sputtered in N2/O2 Atmosphere
1992 Volume 100 Issue 1168 Pages 1394-1397
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1992 Volume 100 Issue 1168 Pages 1394-1397
The usage of mixed N2/O2 gas in the preparation of tin oxide thin films by sputtering was examined in order to clarify the relationship between the resulting crystal structure and the H2 gas sensing properties. The formation of single-phase SnO2 and the degree of preferential orientation of the (110) plane were improved by increasing the oxygen concentration in the sputtering gas. A higher gas sensitivity was observed in films having higher degrees of the orientation of the (110) plane, and the maximum sensitivity was increased by about 1.5 times of that for the film prepared in Ar/O2 atmosphere.
