Junctions of Pr-Co-O Thin Films and Semiconductive BaTiO₃ and their Electrical Properties

Abstract

Thin films of a mixture system of Pr-Co-O were deposited on quartz glass substrates by RF sputtering. The films of Pr-O were polycrystalline, but addition of Co inhibited the crystallization of the films. As increasing Co content of the films, the electrical conductivities increased and their activation energies decreased. The same films were also deposited on semiconductive BaTiO₃ ceramics to form hetero-junctions. Forward current of the junctions abruptly rose at about 2V, and the rising voltage was independent on the film composition. On the other hand, reverse current of the junctions increased with increasing of Co content, but abrupt rising of the current was not observed. Capacitance of Pr-O thin film-BaTiO₃ junction was about 0.1μF/cm², and increased to about 0.9μF/cm² by addition of Co.