Abstract
The effects of IV group element (Zr, Ti, Ge, Si) oxides addition on the grain growth of SnO2 thin films at elevated temperature (600-1000°C) were investigated. It was found that addition of 10mol% GeO2 controlled the grain growth of SnO2 effectively without changing the resistivity. Addition of GeO2 decreased the response time for 2-methyl-2-butene by the formation of SnO2 thin films with uniform crystallite size.
