1995 Volume 103 Issue 1203 Pages 1112-1116
Temperature dependence of the electrical conductivity and the Seebeck coefficient at room temperature of hole-doped Sr1+xLa1-xCrO4+δ(0≤x≤0.3) were measured and analyzed based on the variablerange hopping (VRH) model. The results are summarized as follows:
(1) Linear relationship between ln σ and T-1/4 or T-1/3 was obtained. This shows that the mechanism of the electrical conduction in the materials was well described by three- or two-dimensional VRH model.
(2) The analysis of electrical conductivity based on three-dimensional VRH model showed the larger T0 values, 108K, in this system than that 0.3-7×106K of an insulating La2CuO4. This suggests the localization length of impurity states in this system is much smaller than that of La2CuO4.
(3) The variation of Seebeck coefficients at room temperature suggests that not only the DOS but also the band width nearby the Fermi level were increased upon the hole-doping.
