1995 Volume 103 Issue 1203 Pages 1182-1187
We have developed p-type bismuth telluride of (Bi2Te3)0.25(Sb2Te3)0.75 system with modified PIES method, which shows the figure of merit and compressive strength of 1.6×10-3/K(25°C), and 9.8 MPa, respectively. Thermoelectric properties showed no anisotropy of electrical transport phenomena because the microstructure had no orientation of the grain growth. The improved compressive strength was presumably due to small grain sizes. The milling mechanism obeyed Kick's law.