Preparation of Semiconductive Epitaxial BaTiO₃ Thin Film and its Electrical Properties

Abstract

Submicron semiconductive epitaxial BaTiO₃ thin film was prepared on (100) MgO substrate. An epitaxially grown BaTiO₃ film prepared by MOCVD was coated with ethanol solution of LaCl₃ and heated under a reducing atmosphere at 800-1200°C. The resistivity was less than 1Ω·cm and the carrier concentration was in the order of 10¹⁸cm^-3. The film was n-type semiconductor and the resistivity increased abruptly with the increase in temperature above 600°C in air because of the decrease of the carrier concentration.