Preparation of Silicon Oxide Films by CVD Using Fluorotriethoxysilane

Abstract

Preparation of silicon oxide films was tried by chemical vapor deposition (CVD) at substrate temperatures (T_sub) from 298 to 308K and pressures in CVD chamber (P_chm) from 4 to 13kPa. Fluorotriethoxysilane (FTES) and water which were vaporized in thermostatic oil baths were used as source materials. Dense films were obtained at T_sub below 303K and P_chm above 6.7kPa, and the deposition rate was seriously affected by the bath temperature to evaporate water. Deposited films were examined by infrared reflection spectroscopy and X-ray photoelectron spectroscopy, and it was found that the deposits contained fluorine. The relation between current density and electric field of dense films was also examined.