Journal of the Ceramic Society of Japan
Online ISSN : 1882-1022
Print ISSN : 0914-5400
ISSN-L : 0914-5400
Microstructure of Junction Interface of Semiconductive SrTiO3 Single Crystals and Change of I-V Characteristics by Oxidation/Reduction
Osamu SAKURAIMasaru SOEDAAtsushi SAIKIKazuo SHINOZAKINobuyasu MIZUTANI
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1998 Volume 106 Issue 1231 Pages 308-311

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Abstract
Microstructure and electrical properties of La-doped seiconductive SrTiO3 bicrystals were investigated. SrTiO3 bicrystals having several kinds of twisted angle were prepared by hot pressing at 1662°C, 0.1MPa for 5h in air. Angular shaped boundary layers were observed between the crystals. Many closed pores were observed at the center of boundary layers, and open pores were observed at the edge of boundary layers. Non-linear I-V characteristics across the junction of the bicrystals were measured on as prepared samples. The non-linear coefficient of the sample was relatively larger than that of a simple junction without boundary layers. The I-V characteristics of bicrystals could be changed from non-linear to linear by heating the sample in an H2-N2 mixed gas atmosphere. Furthermore, by heating in an O2 atmosphere the linear I-V characteristics of the samples reversed to non-linear.
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