Abstract
The accuracy in the quantitative phase analysis (QPA) of α- and β-silicon nitrides using the Gazzara method, the Rietveld method and the Whole-Powder-Pattern Decomposition (WPPD) method was examined. Integrated intensities, which were obtained by a profile fitting technique, and peak intensities were used for the Gazzara method. Experimental and analysis conditions were varied, and their influences on the accuracy of the QPA were examined. Model parameters in profile fittings, the Rietveld method and the WPPD method were optimized, and the standard settings for powder diffraction experiment were established. Under the optimized condition the three methods for the QPA gave errors, measured as the deviation from weighed value, of 0.9, 0.8 and 0.4 mass% at the maximum and of 0.3, 0.4 and 0.1 mass% on the average. On the other hand, the Gazzara method using peak-intensities gave a less accurate result ranging up to 6.4 mass%.
