Crystal Growth of GaN from Na-Ga Melt in BN Containers

Abstract

A melt of Na and Ga with various Ga contents was placed in a BN crucible and reacted at 650°C for 300h with N₂ generated from the decomposition of NaN₃ in a sealed stainless-steel tube. At 0.25 and 0.45 Ga molar fractions (r_Ga=Ga/(Ga+Na)), GaN precipitated at the interface of the melt and gas phases, and on the wall and bottom of the crucible. Platelet single crystals with a maximum size of 2mm grew at the inside of the interface layer. The precipitates on the wall and bottom consisted of hexagonal columnar crystals elongated along the c-axis direction. The size of these crystals was about 10-20μm at r_Ga=0.25 and 50-100μm at r_Ga=0.45. The morphology of the precipitates observed by scanning electron microscopy suggested that the columnar GaN crystals grew from the melt phase. At r_Ga=0.65 and 0.85, thin GaN microcrystalline layers partially covered the Na-Ga melt surface, but the formation of bulk GaN was not observed in the BN crucible.