2002 Volume 110 Issue 1281 Pages 333-337
YSZ thin films were deposited by pulsed laser deposition (PLD) on Si(001) with native SiO2, H-terminated Si(001) and ablated Si on H-terminated Si(001) at various temperatures (800, 600, 400, 200°C and RT (room temperature)). The crystallinity of YSZ thin film on Si(001) with native oxide was the highest among the three substrates. YSZ thin film on ablated Si on H-terminated Si(001) was amorphous. We suggest that an ultrathin SiO2 layer (<1.1nm) is necessary for crystal growth of YSZ thin film. A two-step process was attempted to prepare epitaxial YSZ thin films. First, YSZ thin films were deposited on Si(001) with native SiO2 at 800°C in 8.0×10-5Pa O2 (reduction condition). Second, YSZ thin films were deposited on Si(001) with native SiO2 at various temperatures (800, 600, 400, 200°C and RT) in 7.3×10-2Pa O2. All YSZ thin films deposited by a two-step process were epitaxial. The reason for this mechanism is discussed.
