Abstract
Formation of Cr-metallized layer on the surface of SiC ceramics by the vapor-diffusion method was studied The metallization was carried out at 1273K up to 360ks in an evacuated chamber. As a vapor source, pure Cr powder was used. The kinetics of layer growth was described by the parabolic law with the rate constant of 4.2×10-16m2/s at 1273K The metallized layer was composed of four layers; double carbide: Cr5-xSi3-zCx+z at the bottom layer, chromium silicide: Cr5Si3 at the middle layer, a transition layer from chromium silicide to chromium cabides which consist of a Cr7C3 and Cr3C2 at the surface layer.
