Abstract
High density titanium nitride having various non-stoichiometries (TiNx: x=0.56-0.97) was prepared by hot isostatic pressing between 1350° and 1650°C and at 50 to 60MPa. Thermoelectrical properties were measured at the temperature region 25° to 1000°C, Temperature and/or pressure needed for densification increased with increasing nitrogen content. The lattice constant increased linearly with increasing nitrogen content. Thermoelectrical powers were small and increased with increasing temperature. They were, however, only slightly affected by the non-stoichiometry, and had a maximum at approximately x=0.75. Electrical conductivities decreased with increasing temperature and with decreasing nitrogen content. These results were explained by the quasi-free electron model for the carrier transport.
