1989 Volume 97 Issue 1129 Pages 954-959
Electrical properties of PbTiO3-MgTiO3 (MgO=2000-6000ppm) single crystals grown by the flux cooling method were studied. Arrhenius plots of σdc for PbTiO3-MgTiO3 (MgO=4000-6000ppm) exhibited high linearity. The apparent activation energy Ua and conductivity σ obtained were 0.9eV and (3.0-3.4)×103 exp (-0.9/kT)Ω-1·cm-1, respectively. I-V characteristic curve was separated into two ranges at the temperature above 300°C independent of the quantity of doped MgO. Thermal breakdown of specimens caused by joule heat was frequently observed in the high field range. The relationship between the quantity of doped MgO and temperature dependence of EH showed that the effects of doped Mg2+ ions remarkably decrease with increasing temperature. It is possible to apply the poling dc-electric field approximately 30-50V/cm by the electric field cooling method in the range from high temperature above Tc to room temperature.
