Optical and Electrical Properties of 3d Ion Doped Ceramic Films

Abstract

ZrO₂ thin films doped with Cr were prepared on ITO coated glass substrates by magnetron rf-sputtering in a mixture of Argon and Oxygen. Al/Cr-ZrO₂/ITO structure devices were used for electrical and optical measurements. The one-light-source photocurrent and UV-stimulated photocurrent spectroscopy measurements were carried in the range of 1000nm and 340nm. These photocurrent spectroscopies suggested that an impulity level of Cr-ion and a discrete trap level exist at approximatly 2.6eV and 2.2eV below the ZrO₂ conduction band edge, respectively. C-V measurement revealed that Cr-doped ZrO₂ films have a charge storage effect.