Abstract
PbTiO3 thin films were prepared by activated reactive evaporation (ARE) through controlling evaporation rates of Pb and Ti, O2 pressure, and substrate temperature. The Pb/Ti ratio of these films depended on the evaporation rate of Ti. When the substrate temperature and O2 pressure were held at 600°C and 1.6×10-4 Torr respectively, the optimum evaporation rates of Ti and Pb for a nearly stoichiometric PbTiO3 film were 0.2 and 1.2-1.8Å/s, respectively. PbTiO3 films deposited on a c-plane of sapphire showed preferred orientation of (111) plane, and those on (100) plane of MgO showed strong c-axis orientation. AES depth profile mesurements and SEM observations indicated that these films were uniform in composition and dense.
