Abstract
Barium isopropoxide, lead naphthenate and titanium isopropoxide were mixed into a homogeneous solution. The homogeneous solution was spin-coated on silicon substrates and the obtained films were fired at 800°C in O2. The dielectric constant of the films depended on the Ba/Pb molar ratio. Maximum value, which was 300, was obtained at Ba/Pb=50/50. The dielectric constant of the films were different from those previously reported for the bulk materials. This seems to be caused by the existence of the residual stress which was derived from the difference of thermal expansion coefficient between the films and the Si substrate. The fluctuation of the composition (Pb/Ba ratio) in the film was observed in (Ba, Pb)TiO3 system by SIMS analysis. This fluctuation seemed to have occurred because barium alkoxide was more reactive to water than lead naphthenate.
