Synthesis and the Luminescence Property of Tb³⁺ Doped ZrO₂ Thin Film by the Liquid Phase Deposition Method

Abstract

Terbium (III) ion-doped zirconia (ZrO₂:Tb³⁺) thin films have been directly prepared on soda-lime glass and Si wafer by the liquid phase deposition (LPD) method. The stabilization of Tb³⁺ ion in the LPD reaction solution, containing fluoride anions, was successfully achieved by using DTPA (diethylenetriaminepentaacetic acid) as a masking reagent. Preparation composition of ZrO₂:Tb³⁺ thin film was determined by inductively coupled plasma-atomic emission (ICP-AES) microscopy analysis. The structural and luminescence properties for the deposited films were analyzed. After annealed at 900°C, the deposited film shows characteristic strong emission assigned to ⁵D₄→⁷F₅ of Tb³⁺ under CT band excitation.