Bipolar resistance switching property of Al-Ag/La0.7Ca0.3MnO3/Pt sandwiches

Xin Jun LIU; X. M. LI; W. D. YU; Q. WANG; R. YANG; X. CAO; L. D. CHEN

doi:10.2109/jcersj2.117.732

Papers

Bipolar resistance switching property of Al-Ag/La_0.7Ca_0.3MnO₃/Pt sandwiches

Xin Jun LIU, X. M. LI, W. D. YU, Q. WANG, R. YANG, X. CAO, L. D. CHEN

Author information

Xin Jun LIU
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
X. M. LI
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
W. D. YU
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Q. WANG
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
R. YANG
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Graduate School of the Chinese Academy of Sciences
X. CAO
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences
Graduate School of the Chinese Academy of Sciences
L. D. CHEN
State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences

Keywords: RRAM, Resistance switching, Alloy electrodes, Manganites, Thin film

JOURNAL FREE ACCESS

2009 Volume 117 Issue 1366 Pages 732-735

DOI https://doi.org/10.2109/jcersj2.117.732

Details

Abstract

Bipolar resistance switching was investigated on La_0.7Ca_0.3MnO₃ (LCMO) thin film with Al-Ag alloy top electrode (TE) including different Ag contents. The switching capability of Al-Ag/LCMO/Pt was greatly improved in Al-33%Ag TE structure compared to in Al-50%Ag TE structure. Switching times of faster than 100 ns and rewrite cycles of more than 400 were obtained while maintaining a ratio of resistance change larger than 1000%. The mechanism of resistance switching was explained by a model with interfacial nanostructured domains composed of Ag and insulator AlO_x matrix, as previously proposed for Al-50%Ag/LCMO/Pt structure.

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