Stress engineering of the alkoxide derived ferroelectric thin film on Si wafer

Abstract

This paper specifically examines control of the residual stress in thin films by design of the stacking structure. For this study, we prepared highly a-, c- oriented PZT(30/70) (: PZT30) thin films using chemical solution deposition (CSD). A PZT30 thin film was deposited on LaNiO₃ (LNO)/Pt/Ti/SiO₂/Si and LNO/SiO₂/Si with different LNO layer thickness to control the thermal stress. An LNO layer was also prepared using CSD on a Pt/Ti/SiO₂/Si substrate and SiO₂/Si substrate. The residual stresses in the PZT30 thin films were estimated using Raman analysis. Furthermore, the dielectric property of samples was measured using an impedance analyzer. Effects of the residual stress on the dielectric behavior were demonstrated through experimentation.