Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
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Orientation control of α-Al2O3 films prepared by laser chemical vapor deposition using a diode laser
Yu YOUAkihiko ITORong TUTakashi GOTO
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2010 Volume 118 Issue 1377 Pages 366-369

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Abstract

(006)-, (104)- and (012)-oriented α-Al2O3 films in a single phase were prepared by laser chemical vapor deposition (LCVD) using a diode laser. The effects of laser power (PL), deposition temperature (Tdep) and total pressure (Ptot) on the crystal phase, orientation, microstructure and deposition rate (Rdep) were investigated. The orientation of α-Al2O3 films changed from (006) to (104) to (012) with increasing PL. Higher oriented films were deposited at a lower Ptot. The microstructure of α-Al2O3 films changed from a cauliflower-like structure to a hexagonal faceted structure to a pyramid-like structure with increasing PL. The Rdep of oriented α-Al2O3 films slightly increased from 30 to 40 µm·h−1 with decreasing PL, which was about 50 times greater than that of conventional thermal CVD.

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© 2010 The Ceramic Society of Japan
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