Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535
Feature: Evolution of Dielectric Materials: Papers
Structural characterization of epitaxial multiferroic BiFeO3 films grown on SrTiO3 (100) substrates by crystallizing amorphous Bi–Fe–Ox
Hiroshi NAGANUMATakamichi MIYAZAKIAkihiko UKACHIMikihiko OOGANEShigemi MIZUKAMIYasuo ANDO
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2010 Volume 118 Issue 1380 Pages 648-651

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Abstract
Amorphous Bi–Fe–Ox films prepared on SrTiO3 (100) substrates using a conventional r.f. magnetron sputtering system were crystallized by post-annealing at 873 K in an atmosphere. Microstructural observations by X-ray diffraction and cross-sectional transmission electron microscopy revealed that the crystallized Bi–Fe–Ox films were well-epitaxially BiFeO3 fabricated without interfacial layer although as-prepared film was amorphous structure with excess Bi. The crystallized BiFeO3 films have fairly epitaxial compatibly ([001](001)BiFeO3 // [001](001)SrTiO3). These results indicate that (1) BiFeO3 has good epitaxial compatibility with SrTiO3 and (2) crystallizing amorphous Bi–Fe–Ox is one possible method that can be used to fabricate high-quality multiferroic barriers for tunnel junctions.
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© 2010 The Ceramic Society of Japan
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