Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
Feature: Evolution of Dielectric Materials: Papers
Chemical trend of Fermi-level shift in transition metal-doped TiO2 films
Yuji MATSUMOTOMasao KATAYAMATakatoshi ABETakeo OHSAWAIsao OHKUBOHiroshi KUMIGASHIRAMasaharu OSHIMAHideomi KOINUMA
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2010 Volume 118 Issue 1383 Pages 993-996

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Abstract

The effect of doping a wide range of transition metals (TMs) including V, Cr, Mn, Fe, Co, and Ni into rutile TiO2 films grown on Nb-doped TiO2(110) single-crystal substrates was investigated by photoemission spectroscopy and X-ray absorption spectroscopy. For all TM-doped TiO2 films, the Ti 2p and O 1s core levels were similarly shifted to lower binding energies with increasing film thickness and the shifts were similarly saturated at a film thickness of about 15 nm. These peak shifts could be interpreted in terms of the Fermi level shift, indicating that dopants trap excess electrons from the Ti 3d band like acceptors. The present systematic data revealed that the magnitude of the saturated Fermi level shift correlates well with the effective charge transfer energy.

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© 2010 The Ceramic Society of Japan
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