Laser chemical vapor deposition of TiN film on Ti(C,N)-based cermet substrate using Ti(OiPr)₂(dpm)₂–NH₃ system

Abstract

TiN films were prepared on Ti(C,N)-based cermet substrate by laser chemical vapor deposition using titanium isopropoxide dipivaloylmethane [Ti(OiPr)₂(dpm)₂] and ammonia (NH₃) as precursors. The effects of deposition temperature (T_dep) and laser power (P_L) on the crystal phase, microstructure and adhesion were investigated. TiN film was prepared at T_dep > 903 K (P_L > 100 W). The microstructure of TiN film changed from rose-like grains to pyramid-like grains to aggregate grains with increasing P_L and T_dep. Highly adhesive film was obtained at moderate T_dep = 1047 K (P_L = 120 W).