Effect of in situ-synthesized nano-size SiC addition on density and electrical resistivity of liquid-phase sintered silicon carbide ceramics

Abstract

Submicron-size SiC ceramics were sintered to densities >97% of the theoretical density by adding 5 wt % in situ-synthesized nano-size SiC and 2 wt % AlN–RE₂O₃ (RE = Y, Er). The SiC ceramics showed very low electrical resistivity in an order of 10⁻⁴ Ω·m. This low electrical resistivity was attributed to the smaller amount (2 wt %) of sintering additives addition and their microstructural characteristics, i.e., growth of nitrogn-doped SiC grains and the confinment of non-conducting Y- and Er-containing phases in the junction areas.