Synthesis of particulate InN crystal by the reaction of InCl₃ with LiNH₂

Abstract

A method to synthesize indium nitride (InN) crystal by the reaction of InCl₃ with LiNH₂ under N₂ atmosphere was studied. InN was formed at the temperature ranging from 350 to 450°C under 0.1 MPa N₂ atmosphere. X-ray diffraction (XRD) pattern and transmission electron microscope (TEM) image indicated that synthesized InN was crystalline powder with a wurtzite structure. Band gap was determined by plotting (αhν)² vs. hν for direct transition and the value of 0.83 eV was obtained.