Abstract
We investigated the detailed charge injection properties of a metal (Pt)/insulator (Cr2O3)/floating gate layer (Cr2O3−x)/magnetic filtering layer/tunnel layer (CeO2)/semiconductor (Si) capacitor. This capacitor shows charge injection type capacitance–voltage (C–V) properties with a hysteresis window. The hysteresis window width (HWW) can be controlled by an external electric or magnetic field. Changes in the HWW are determined by the combined spin density of state of a spin filter layer and a floating gate. Our results indicate that this capacitor may be able to electromagnetically store multiple charges.
