Volume 121 (2013) Issue 1420 Pages 1004-1007
We studied the diffusion of Zn in dense SnO2 ceramics by using secondary ion mass spectrometry (SIMS). Dense SnO2 ceramics with additives of 6 mol.% MgO and 0.2 mol.% Sb2O5 were synthesized, and Zn was implanted in the SnO2 ceramics by ion implantation technique. The implanted samples were annealed at 850–1200°C, and the concentration profiles of Zn were evaluated by SIMS. The temperature dependence of Zn diffusion at 850–950°C could be expressed as DZn[cm2/s] = 3.3 × 106 exp(−463.5[kJ/mol]/RT). These results in relation to the fabrication process of SnO2 with added ZnO was then discussed.