Abstract
BiFeO3 thin films were fabricated by a simple spin-coating method as an electron transport layer in CH3NH3PbI3-based photovoltaic devices. Single-phase BiFeO3 was obtained, which was confirmed by X-ray diffraction. To characterize photovoltaic properties, BiFeO3/CH3NH3PbI3-based photovoltaic devices were fabricated by different preparation steps for CH3NH3PbI3 layer, and current density–voltage characteristics of the photovoltaic devices showed rectifying behaviors. Comparing with the BiFeO3/CH3NH3PbI3 photovoltaic device fabricated by a 1-step method, the conversion efficiency of the device fabricated by a 2-step method was improved. Bandgaps of the BiFeO3 and CH3NH3PbI3 layers were also determined from optical absorption measurements.
