Abstract
The effects of annealing temperatures on perovskite-type photovoltaic devices were investigated. CH3NH3PbI3 photovoltaic devices doped with Cl were fabricated by the spin-coating method, and the microstructures of the cells were investigated by X-ray diffraction, optical microscopy and scanning electron microscopy. The current density–voltage characteristics and incident photon-to-current conversion efficiencies were improved by application of an appropriate annealing process, leading to improvement of the photoconversion efficiencies to 13.28%. Microstructure analysis indicated that the perovskite layer had a homogeneous morphology after annealing at 140°C, and that the devices provided stability in air.
