Borazine-type single source precursor with vinyl to SiBCN ceramic

Abstract

A single source precursor of borazine derivative (B{NH[Si(CH₃)₂CH=CH₂]}NH)₃ (TSAB) was designed for electronic applications. The result of thermo gravimetric analysis combined with mass spectrometry shows a ceramic yield of 60.7%. The X-ray photo-electron spectroscopy confirms that the siliconboron carbonitride (SiBCN) ceramic is obtained. The powder X-ray diffraction pattern and Raman spectra show that the graphite and a little hexagonal BN are formed after pyrolysis at 1500°C. The room temperature conductivity increases with the pyrolysis temperature, the highest is approximately 10⁻⁴ (Ω·cm)⁻¹ for SiBCN ceramic from cured TSAB pyrolyzed at 1500°C. Photoluminescence is observed in the visible range. The peaks appear at 417, 466, 498, and 593 nm (2.97, 2.66, 2.49, and 2.09 eV, respectively).