Preparation of orthorhombic Y-doped TaON film

Abstract

Y-doped TaON films were grown on (001)YSZ and (012)Al₂O₃ substrates by radio frequency (RF) magnetron reactive sputtering deposition from Ta metal target and Y metal chips under the mixture gases of N₂, O₂ and Ar gases. Films with various Y content were prepared by changing area ratio of Y/(Y + Ta) of the target. The pure monoclinic phase was obtained for TaON films on both substrates by controlling the partial pressure of N₂ and O₂ gasses. Crystal structure changed from the monoclinic phase to the orthorhombic one with the lattice parameters of a = 0.518 nm, b = 0.488 nm, and c = 0.504 nm with the increase in Y content in the films. Our results reveal that TaON could be used as a novel mother fluorite-like monoclinic structure to prepare orthorhombic phase.