Journal of the Ceramic Society of Japan
Online ISSN : 1348-6535
Print ISSN : 1882-0743
ISSN-L : 1348-6535
Feature: Cutting Edge Research on Electroceramics 2023: Technical report
Effect of vacuum-ultraviolet irradiation on structure and resistivity of epitaxial copper oxide thin films
Yuchi QiaoKenta KanekoItsuki OsawaSatoru KanekoMamoru YoshimotoAkifumi Matsuda
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JOURNAL OPEN ACCESS

2024 Volume 132 Issue 7 Pages 381-386

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Abstract

The structural and property control of copper oxide thin films driven by vacuum ultraviolet irradiation at room temperature in air was determined in this study. Cu2O(110) thin films were epitaxially grown as precursor crystals on MgO(100) substrates using pulsed laser deposition. The Cu2O thin films were subsequently irradiated with vacuum ultraviolet light (λ = 172 nm) using a xenon excimer lamp for up to 120 min. Structural analyses by in-plane X-ray diffraction, reciprocal space mapping, and reflection high-energy electron diffraction observation indicated the phase transition of Cu2O to CuO crystals in the near-surface area, maintaining the oriented structure. The bi-epitaxial relationships were as follows: CuO(010)[100] // Cu2O(110)[001] // MgO(100)[011] and CuO(010)[001] // Cu2O(110)[110] // MgO(100)[011]. Significant improvement of conductivity in the order of 103 was demonstrated, that the resistivity decreased from ∼2.1 × 103 Ω cm to ∼1.2 Ω cm after irradiation of 120 min. The present light-driven formation of epitaxial heterostructures of both Cu2O and CuO p-type semiconductors will be useful for the development and property control of devices.

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© 2024 The Ceramic Society of Japan

この記事はクリエイティブ・コモンズ [表示 4.0 国際]ライセンスの下に提供されています。
https://creativecommons.org/licenses/by/4.0/deed.ja
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