Host: The Ceramic Society of Japan
Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.
A thin film including beta-silicon carbide (β-SiC) was synthesized by carbon silicification through a reaction between gaseous silicon monoxide (SiO) gas and carbon source derived from polyimide film (PIF). The sample obtained had film shape similar to that of the carbon source film. Two reacted regions were found on both surfaces of the carbon source film, as well as the un-reacted region in the middle of the sample with less than 3 h synthesis time. Formation mechanism of β-SiC film formed by the reaction between SiO gas and carbon source film at 1400°C was investigated based on relationship among SiC conversion ratio, reaction time and atmospheres. Formation processes were simulated thermodynamically and kinetically by the calculations solving differential equations concerning with a rate of chemical species. Results of the simulated curves for the SiC conversion ratio calculated from 6 chemical equations, 12 rate constants, 2 diffusion constants, 9 chemical species and 9 differential equations have a good agreement with the experimental results of the SiC conversion ratio as a function of reaction time.