Silicon Carbide Synthesis by Sublimation Method

Kazunori KIJIMA; Susumu TOMIIE

doi:10.14852/jcersjsuppl.112.0.S374.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 5

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S374.0

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Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Ceramic letter

Silicon Carbide Synthesis by Sublimation Method

Kazunori KIJIMA, Susumu TOMIIE

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Keywords: Sublimation method, 3C-SiC, Polycrystalline, The distance between substrate and source

CONFERENCE PROCEEDINGS FREE ACCESS

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Abstract

SiC properties change with grain size, orientation, and surface morphology. We prepared polycrystalline 3C-SiC on graphite by sublimation method using 6H-SiC powder compacts as source materials. The present study investigated the distance between the substrate and the SiC source, temperature gradients between the substrate and the SiC source=20-40°C/mm, under the constant experimental conditions (argon pressure=133 kPa, substrate temperature=1580°C, deposition time=30 minutes) Deposited crystals showed clear hexagonal habit and yellowish color. The maximum growth rate was obtained with preferred (111) orientation, and at 13 mm distance between the substrate and the SiC source.

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