Anisotropy in Electrical Conductivity of (ZnO)5In2O3 Single Crystal Grown by a Flux Method

Oleg MALOCHKIN; Won-Seon SEO; Yasuhiro ONO; Tsuyoshi KAJITANI; Kunihito KOUMOTO

doi:10.14852/jcersjsuppl.112.0.S622.0

Journal of the Ceramic Society of Japan, Supplement 112-1, PacRim5 Special Issue

Session ID : 9

DOI https://doi.org/10.14852/jcersjsuppl.112.0.S622.0

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Host: The Ceramic Society of Japan

Co-host: Iketani Science and Technology Foundation, International Ceramic Federation, Commemorative Organization for the Japan World Exposition '70, The American Ceramic Society, The Australasian Ceramic Society, The Chinese Ceramic Society, The Korean Ceramic Society, Joint Research Consortium of Synergy Ceramics/Fine Ceramics Research Association, Nanotechnology Researchers Network Center of Japan, The Special Coordination Funds for Promoting Science and Technology, Japan National Tourist Organization, Aichi Prefectural Government, CASIO SCIENCE PROMOTION FOUNDATION, DAIKO FOUNDATION, Nagoya Convention and Visitors Bureau, The Asahi Glass Foundation, The Kao Foundation For Arts And Sciences, The Murata Science Foundation, The Ogasawara Foundation for the Promotion of Science & Engineering, ASAHI GLASS CO., LTD. Research Center, CENTRAL GLASS CO., LTD., ELECTRIC GLASS INDUSTRY ASSOCIATION OF JAPAN (EGAJ), Hattori Company, Ltd., Hitachi Research Laboratory, Hitachi, Ltd., HOYA CORPORATION, INAX Corporation, ITOCHU CERATECH CORP., Japan Cement Association, KYOCERA Corporation, KYUSHU REFRACTORIES CO., LTD., MINO CERAMIC CO., LTD., Murata Manufacturing Co., Ltd., NGK INSULATORS LTD., NGK SPARK PLUG CO., LTD., NICHIAS Corporation, NIKKO COMPANY, Nippon Electric Glass Co., Ltd., Nippon Sheet Glass Co., Ltd., NORITAKE CO., LIMITED, Tokuyama Corporation, TOTO LTD.

Papers

Anisotropy in Electrical Conductivity of (ZnO)₅In₂O₃ Single Crystal Grown by a Flux Method

Oleg MALOCHKIN, Won-Seon SEO, Yasuhiro ONO, Tsuyoshi KAJITANI, Kunihito KOUMOTO

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Keywords: (ZnO)₅In₂O₃, Single crystal, Flux method, Electrical conductivity, Band gap energy

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Abstract

Single crystals of (ZnO)₅In₂O₃ were grown by means of the slow cooling method, using PbF₂ as a flux, at reaction temperatures of 1050-1150°C and different cooling rates. The resulting flaky single crystals with a maximum area of 3×2 mm² were very thin along the c-axis. Single crystal quality was evaluated by XRD, TEM, and SEM. The in-plane electrical conductivity (σ) was measured in the temperature range of 300 K to 1200 K in air. Band gap energy of (ZnO)₅In₂O₃ single crystal was optically determined. Anisotropy of two orders of magnitude in electrical conductivity was first clarified.

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