Abstract
Semiconductor epitaxial CVD single crystal diamond is considered a potential material for power devices because of its unique characteristics. In the discussion on the relationship between crystal quality and device performance, the atomic purity and defect concentration have been considered. In this paper, the dislocation analysis is shown for the suggestion of the established standard dislocation analysis method. The aggregation of edge dislocation and mixed dislocation are observed by the analysis by using X-ray topography.
