Growth of Dislocation-free III-V Compound Crystals by means of Impurity Doping Procedure

Abstract

Dislocation-free InP and GaAs crystals have been grown by a liquid encapsulationtechnique by means of an impurity doping procedure. It was found that grown-indislocations were diminished, when a certain kind of impurities was added into themelt from which crystal was pulled.
Impurity effect on grown-in dislocation density was examined for Zn, S and Te inInP, and for Zn, S, Te, Al and N in GaAs. It was found that these impurities wereeffective for reducing grown-in dislocation density, except for Zn in GaAs.
Effectiveness of impurity for reducing the grown-in dislocation density was ascribedto strength of bonds formed between the substitutional impurity atoms and host crystalatoms surrounding the impurity atoms.