Nihon Kessho Gakkaishi
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
In-situ obsevation of molten silicon convection was performed by X-ray radiography
Koichi KAKIMOTOMinoru EGUCHIMasahito WATANABETaketoshi HIBIYA
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1991 Volume 33 Issue 1 Pages 21-26

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Abstract
Condition of crystal and crucible rotation rates which offers unstable flow was revealed. It has been conventionally reported that iso-rotational condition of crystal and crucible has been thought to make stable flow from numerical simulation with assumption of axisymmetric and steady flow. However, it has become clear that the iso-rotational condition is not able to make stable flow from the present experiment. We also made it clear that the volume expansion coefficient of molten silicon should be order of 10-4 K while two different values of the constant such as 1.43×10-4 and 1.43×10-5 K had been previously reported.
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© The Crystallographic Society of Japan
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