Nihon Kessho Gakkaishi
Online ISSN : 1884-5576
Print ISSN : 0369-4585
ISSN-L : 0369-4585
Development of Gallium Nitride Based Crystals-Present Status and Future Prospects
Hiroshi AMANO
Author information
JOURNAL FREE ACCESS

1997 Volume 39 Issue 2 Pages 202-204

Details
Download PDF (1311K)
Download citation RIS

(compatible with EndNote, Reference Manager, ProCite, RefWorks)

BIB TEX

(compatible with BibDesk, LaTeX)

Text
How to download citation
Contact us
Abstract
Recent development of gallium nitride (GaN) based crystals was reviewed. Use of low temperature deposited buffer layer is essential for the growth of device-quality GaN on highly-mismatched substrate.
Content from these authors
© The Crystallographic Society of Japan
Previous article Next article
Favorites & Alerts

Recently viewed articles
Predecessor

X-RAYS

Share this page
feedback
 Top