Measurement of Permittivity of a Sapphire Dielectric Plate by the Cavity Resonance Method

Abstract

Development of microwave integrated circuits and high-T_c superconductive thin-film circuits is performed briskly, and dielectric substrate is used as the material. Circular cavity resonance and microstripline resonator methods are used for measuring the permittivity of dielectric substrates in the microwave region. This paper presents the measured results of permittivity of c-sapphire and r-sapphire substrates by these methods.