Abstract
Scanning laser-SQUID microscopy (SLSM) is a newly developed technique. Only three groups in the world have published their experimental results. In this review paper, we provide an explanation of SLSM, and discuss the advantages of SLSM over conventional techniques including how to apply SLSM to LSI inspection (identification of bad chips) and LSI failure analysis (fault site isolation on chips). Our first SLSM machine showed a spatial resolution of 1.3 μm using a 488-nm-wavelength laser, and our second SLSM machine showed a spatial resolution of 0.89 μm when irradiating a 1,064-nm-wavelength laser from the backside of a Si wafer. Irradiation from the backside of a wafer makes it possible to irradiate all p-n junctions of an LSI, which is expected to increase the efficiency of inspection and analysis. The possibility of in-line inspections was demonstrated in a general case. The possibility of failure analysis was demonstrated in a special case.
