Abstract
Low temperature operation of MOS devices improves performance of LSI circuits because of the increase of carrier mobility, steep subthreshold slopes, elimination of latch-up, decrease of electrical resistance and improved noise behavior. A supercomputer using CMOS circuit technology cooled at liquid-nitrogen temperatures operates at double the speed of the circuit chips as compared to room-temperature operation. A further improvement of the speed in CMOS chips will be possible by optimizing the device design.
