Abstract
In this paper, we reviewed the current progress of superconducting devices, specially High Tc three terminal devices. Properties of High Tc material and developments of the process technology are briefly summarized. A superconducting base three terminal device of In/(Ba, Rb) BiO3/SrTiO3(Nb) structure was procuced and evaluated. With a base thickness of 70nm, α=0.94 and β=10 were achieved. High Tc field effect transistors and flux-flow transistors, which have been operated in a good transistor action, are reviewed.
