2019 Volume 98 Issue 10 Pages 272-278
This paper experimentally and numerically investigates the growth rate of SiO2 film by thermal CVD from the oxidization of hexamethyldisiloxane in a horizontal tubular reactor. The control steps of the mass transfer were changed from the surface reaction to the diffusion of raw material. By using the differential reactor model, the surface reaction rate was dependent on not only the first order of the hexamethyldisiloxane concentration, but also the power 0.55 of the oxygen concentration. The activation energy of the reaction rate constant was 127 kJ/mol. In the diffusion control step, the apparent diffusion coefficient was obtained by Akiyama’s model and dependent on the power 1.75 of the temperature. Except for the diffusion control step, the growth rate distribution was partly reproduced by numerical simulation of heat and mass transfer using the chemical reaction.
