1983 Volume 67 Issue 10 Pages 514-519
The measurements of sensitivity chracteristics of several radiation detectors (silicon photodiodes and photo tubes) were carried out. The relative spectral sensitivity in the wavelength region of 190 to 780 nm was calibrated by a monochromator with about 6. 7 nm bandwidth and a gold black coated PVF2 pyroelectric radiation detector. The absolute sensitivity was calibrated with a ETL spectral irradiance standard lamp and broad bandpass filters. Several times measurements were carried out through about three years and the sensitivity change in sample was also examined.
The results of measurements are as follows:
(1) The sensitivity of silicon photodiodes at 190 nm is 0.15 to 0.28 times of 560 nm value.
(2) In all silicon photodiodes, the sensitivity decrease is observed near the wavelength of 365nm, 275mm and 210nm. These correspond to bands gap absorption of silicon single crystal.
(3) In the wavelength region of 550 to 760 nm, the relative spectral sensitivity of HTV 1337 type silicon photodiodes is agreed with the constant quantum yield radiation detector within ±1% deviation.
(4) The change in sensitivity of four silicon photodiodes for 1 to 3 years is 1 to 1.5% in whole wavelength region.